IRFB17 Series
Manufacturer: Vishay General Semiconductor - Diodes Division
MOSFET N-CH 500V 16A TO220AB
| Part | Drain to Source Voltage (Vdss) | Power Dissipation (Max) [Max] | Vgs(th) (Max) @ Id | Technology | Package / Case | Vgs (Max) | Input Capacitance (Ciss) (Max) @ Vds | Current - Continuous Drain (Id) @ 25°C | Supplier Device Package | Operating Temperature [Min] | Operating Temperature [Max] | Mounting Type | Drive Voltage (Max Rds On, Min Rds On) | FET Type | Gate Charge (Qg) (Max) @ Vgs [Max] | Rds On (Max) @ Id, Vgs [Max] | Gate Charge (Qg) (Max) @ Vgs |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Vishay General Semiconductor - Diodes Division | 500 V | 220 W | 5 V | MOSFET (Metal Oxide) | TO-220-3 | 30 V | 2760 pF | 16 A | TO-220AB | -55 °C | 150 °C | Through Hole | 10 V | N-Channel | 130 nC | ||
Vishay General Semiconductor - Diodes Division | 600 V | 340 W | 5 V | MOSFET (Metal Oxide) | TO-220-3 | 30 V | 17 A | TO-220AB | -55 °C | 150 °C | Through Hole | 10 V | N-Channel | 420 mOhm | 99 nC |