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6-WDFN Exposed Pad
Discrete Semiconductor Products

FDMA291P

Active
ON Semiconductor

MOSFET TRANSISTOR, P CHANNEL, 6.6 A, 20 V, 0.036 OHM, -700 MV, -700 MV ROHS COMPLIANT: YES

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6-WDFN Exposed Pad
Discrete Semiconductor Products

FDMA291P

Active
ON Semiconductor

MOSFET TRANSISTOR, P CHANNEL, 6.6 A, 20 V, 0.036 OHM, -700 MV, -700 MV ROHS COMPLIANT: YES

Technical Specifications

Parameters and characteristics for this part

SpecificationFDMA291P
Current - Continuous Drain (Id) @ 25°C6.6 A
Drain to Source Voltage (Vdss)20 V
Drive Voltage (Max Rds On, Min Rds On)4.5 V, 1.8 V
FET TypeP-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]14 nC
Input Capacitance (Ciss) (Max) @ Vds1000 pF
Mounting TypeSurface Mount
Operating Temperature [Max]150 °C
Operating Temperature [Min]-55 °C
Power Dissipation (Max)2.4 W
Rds On (Max) @ Id, Vgs42 mOhm
Supplier Device Package6-MicroFET (2x2)
TechnologyMOSFET (Metal Oxide)
Vgs (Max)8 V
Vgs(th) (Max) @ Id1 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyCut Tape (CT) 1$ 0.69
10$ 0.60
100$ 0.42
500$ 0.35
1000$ 0.30
Digi-Reel® 1$ 0.69
10$ 0.60
100$ 0.42
500$ 0.35
1000$ 0.30
Tape & Reel (TR) 3000$ 0.26
6000$ 0.25
9000$ 0.23
30000$ 0.23
LCSCPiece 1$ 0.99
10$ 0.97
30$ 0.95
100$ 0.94
NewarkEach (Supplied on Cut Tape) 1$ 1.07
10$ 0.68
25$ 0.60
50$ 0.53
100$ 0.45
250$ 0.40
500$ 0.35
ON SemiconductorN/A 1$ 0.15

Description

General part information

FDMA291P Series

This device is designed specifically for battery charge or load switching in cellular handset and other ultraportable applications. It features a MOSFET with low on-state resistance. The MicroFET 2x2 package offers exceptional thermal performance for its physical size and is well suited to linear mode applications.