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IRF6614TR1PBF
Discrete Semiconductor Products

IRF6662TRPBF

Obsolete
INFINEON

IR MOSFET™ N-CHANNEL ; DIRECTFET™ M PACKAGE; 22 MOHM;

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IRF6614TR1PBF
Discrete Semiconductor Products

IRF6662TRPBF

Obsolete
INFINEON

IR MOSFET™ N-CHANNEL ; DIRECTFET™ M PACKAGE; 22 MOHM;

Deep-Dive with AI

Technical Specifications

Parameters and characteristics for this part

SpecificationIRF6662TRPBF
Current - Continuous Drain (Id) @ 25°C47 A, 8.3 A
Drain to Source Voltage (Vdss)100 V
Drive Voltage (Max Rds On, Min Rds On)10 V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs31 nC
Input Capacitance (Ciss) (Max) @ Vds1360 pF
Mounting TypeSurface Mount
Operating Temperature [Max]150 °C
Operating Temperature [Min]-40 °C
Package / CaseDirectFET™ Isometric MZ
Power Dissipation (Max)2.8 W, 89 W
Rds On (Max) @ Id, Vgs22 mOhm
Supplier Device PackageDIRECTFET™ MZ
TechnologyMOSFET (Metal Oxide)
Vgs (Max)20 V
Vgs(th) (Max) @ Id4.9 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyN/A 457$ 3.16
457$ 3.16
8018$ 1.74
8018$ 1.74

Description

General part information

IRF6662 Series

The StrongIRFET™ power MOSFET family is optimized for low RDS(on)and high current capability. The devices are ideal for low frequency applications requiring performance and ruggedness. The comprehensive portfolio addresses a broad range of applications including DC motors, battery management systems, inverters, and DC-DC converters.

Documents

Technical documentation and resources