IRF6662 Series

Manufacturer: INFINEON

Catalog

IR MOSFET™ N-CHANNEL ; DIRECTFET™ M PACKAGE; 22 MOHM;

Part	Drive Voltage (Max Rds On, Min Rds On)	Drain to Source Voltage (Vdss)	Vgs (Max)	Rds On (Max) @ Id, Vgs	Technology	Gate Charge (Qg) (Max) @ Vgs	Mounting Type	Package / Case	Input Capacitance (Ciss) (Max) @ Vds	Current - Continuous Drain (Id) @ 25°C	Supplier Device Package	Vgs(th) (Max) @ Id	FET Type	Operating Temperature [Min]	Operating Temperature [Max]	Power Dissipation (Max)
INFINEON IRF6662TRPBF	10 V	100 V	20 V	22 mOhm	MOSFET (Metal Oxide)	31 nC	Surface Mount	DirectFET™ Isometric MZ	1360 pF	8.3 A 47 A	DIRECTFET™ MZ	4.9 V	N-Channel	-40 °C	150 °C	2.8 W 89 W
INFINEON IRF6662TRPBF	10 V	100 V	20 V	22 mOhm	MOSFET (Metal Oxide)	31 nC	Surface Mount	DirectFET™ Isometric MZ	1360 pF	8.3 A 47 A	DIRECTFET™ MZ	4.9 V	N-Channel	-40 °C	150 °C	2.8 W 89 W