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PMV230ENEAR
Discrete Semiconductor Products

PMV230ENEAR

NRND
Nexperia USA Inc.

60V, N-CHANNEL TRENCH MOSFET

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PMV230ENEAR
Discrete Semiconductor Products

PMV230ENEAR

NRND
Nexperia USA Inc.

60V, N-CHANNEL TRENCH MOSFET

Technical Specifications

Parameters and characteristics for this part

SpecificationPMV230ENEAR
Current - Continuous Drain (Id) @ 25°C1.5 A
Drain to Source Voltage (Vdss)60 V
Drive Voltage (Max Rds On, Min Rds On)10 V, 4.5 V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs4.8 nC
GradeAutomotive
Input Capacitance (Ciss) (Max) @ Vds177 pF
Mounting TypeSurface Mount
Operating Temperature [Max]150 °C
Operating Temperature [Min]-55 °C
Package / CaseSOT-23-3, TO-236-3, SC-59
Power Dissipation (Max)1.45 W
Power Dissipation (Max)480 mW
QualificationAEC-Q101
Rds On (Max) @ Id, Vgs222 mOhm
Supplier Device PackageTO-236AB
TechnologyMOSFET (Metal Oxide)
Vgs (Max)20 V
Vgs(th) (Max) @ Id2.7 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyN/A 49$ 0.47

Description

General part information

PMV230ENEA Series

60V, N-channel Trench MOSFET