Catalog
60V, N-channel Trench MOSFET
Beta
⌘K
60V, N-channel Trench MOSFET
60V, N-channel Trench MOSFET
| Part | Technology | Package / Case | Operating Temperature [Max] | Operating Temperature [Min] | Power Dissipation (Max) | Power Dissipation (Max) | Input Capacitance (Ciss) (Max) @ Vds | Drain to Source Voltage (Vdss) | Vgs (Max) | Rds On (Max) @ Id, Vgs | Grade | Current - Continuous Drain (Id) @ 25°C | Supplier Device Package | FET Type | Drive Voltage (Max Rds On, Min Rds On) | Mounting Type | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Qualification |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 Nexperia USA Inc. | MOSFET (Metal Oxide) | SC-59 SOT-23-3 TO-236-3 | 150 °C | -55 °C | 1.45 W | 480 mW | 177 pF | 60 V | 20 V | 222 mOhm | Automotive | 1.5 A | TO-236AB | N-Channel | 4.5 V 10 V | Surface Mount | 2.7 V | 4.8 nC | AEC-Q101 |