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TO-263
Discrete Semiconductor Products

FDB082N15A

Active
ON Semiconductor

POWER MOSFET, N CHANNEL, 150 V, 105 A, 0.0067 OHM, TO-263 (D2PAK), SURFACE MOUNT

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TO-263
Discrete Semiconductor Products

FDB082N15A

Active
ON Semiconductor

POWER MOSFET, N CHANNEL, 150 V, 105 A, 0.0067 OHM, TO-263 (D2PAK), SURFACE MOUNT

Technical Specifications

Parameters and characteristics for this part

SpecificationFDB082N15A
Current - Continuous Drain (Id) @ 25°C117 A
Drain to Source Voltage (Vdss)150 V
Drive Voltage (Max Rds On, Min Rds On)10 V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]84 nC
Input Capacitance (Ciss) (Max) @ Vds6040 pF
Mounting TypeSurface Mount
Operating Temperature [Max]175 ░C
Operating Temperature [Min]-55 °C
Package / CaseD2PAK (2 Leads + Tab), TO-263AB, TO-263-3
Power Dissipation (Max)294 W
Rds On (Max) @ Id, Vgs8.2 mOhm
Supplier Device PackageTO-263 (D2PAK)
TechnologyMOSFET (Metal Oxide)
Vgs (Max)20 V
Vgs(th) (Max) @ Id4 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyCut Tape (CT) 1$ 7.44
10$ 5.05
100$ 3.69
Digi-Reel® 1$ 7.44
10$ 5.05
100$ 3.69
Tape & Reel (TR) 800$ 3.21
NewarkEach (Supplied on Full Reel) 1$ 4.04
3000$ 3.86
6000$ 3.60
12000$ 3.35
18000$ 3.22
30000$ 3.17
ON SemiconductorN/A 1$ 2.96

Description

General part information

FDB082N15A Series

This N-Channel MOSFET is produced using an advanced PowerTrench®process that has been tailored to minimize the on-state resistance while maintaining superior switching performance.