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UMT3
Discrete Semiconductor Products

RHU002N06T106

NRND
Rohm Semiconductor

MOSFET N-CH 60V 200MA UMT3

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UMT3
Discrete Semiconductor Products

RHU002N06T106

NRND
Rohm Semiconductor

MOSFET N-CH 60V 200MA UMT3

Deep-Dive with AI

DocumentsDatasheet

Technical Specifications

Parameters and characteristics for this part

SpecificationRHU002N06T106
Current - Continuous Drain (Id) @ 25°C200 mA
Drain to Source Voltage (Vdss)60 V
Drive Voltage (Max Rds On, Min Rds On) [Max]4 V
Drive Voltage (Max Rds On, Min Rds On) [Min]10 V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs4.4 nC
Input Capacitance (Ciss) (Max) @ Vds15 pF
Mounting TypeSurface Mount
Operating Temperature150 °C
Package / CaseSC-70, SOT-323
Power Dissipation (Max)200 mW
Rds On (Max) @ Id, Vgs2.4 Ohm
Supplier Device PackageUMT3
TechnologyMOSFET (Metal Oxide)
Vgs (Max)20 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyCut Tape (CT) 1$ 0.40
10$ 0.28
100$ 0.14
500$ 0.12
1000$ 0.09
Digi-Reel® 1$ 0.40
10$ 0.28
100$ 0.14
500$ 0.12
1000$ 0.09
Tape & Reel (TR) 3000$ 0.07
6000$ 0.07
9000$ 0.06
15000$ 0.06
21000$ 0.06
30000$ 0.05
75000$ 0.05
150000$ 0.05

Description

General part information

RHU002N06FRA Series

MOSFETs are made as ultra-low ON-resistance by the micro-processing technologies suitable for mobile equipment for low current consumption. In wide lineup including compact type, high-power type and complex type to meet in the market.

Documents

Technical documentation and resources