RHU002N06FRA Series

4V Drive Nch MOSFET (AEC-Q101 Qualified)

Catalog

4V Drive Nch MOSFET (AEC-Q101 Qualified)

Part	Operating Temperature	FET Type	Power Dissipation (Max)	Package / Case	Qualification	Input Capacitance (Ciss) (Max) @ Vds	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Mounting Type	Drive Voltage (Max Rds On, Min Rds On) [Max]	Drive Voltage (Max Rds On, Min Rds On) [Min]	Gate Charge (Qg) (Max) @ Vgs	Supplier Device Package	Rds On (Max) @ Id, Vgs	Vgs (Max)	Grade	Technology	Vgs(th) (Max) @ Id [Max]
Rohm Semiconductor RHU002N06FRAT106	150 °C	N-Channel	200 mW	SC-70 SOT-323	AEC-Q101	15 pF	60 V	200 mA	Surface Mount	4 V	10 V	4.4 nC	UMT3	2.4 Ohm	20 V	Automotive	MOSFET (Metal Oxide)	2.5 V
Rohm Semiconductor RHU002N06T106	150 °C	N-Channel	200 mW	SC-70 SOT-323		15 pF	60 V	200 mA	Surface Mount	4 V	10 V	4.4 nC	UMT3	2.4 Ohm	20 V		MOSFET (Metal Oxide)

Catalog

4V Drive Nch MOSFET (AEC-Q101 Qualified)

Description

MOSFETs are made as ultra-low ON-resistance by the micro-processing technologies suitable for mobile equipment for low current consumption. In wide lineup including compact type, high-power type and complex type to meet in the market.