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SOT1118
Discrete Semiconductor Products

PBSS4160PAN,115

Active
Nexperia USA Inc.

BIPOLAR TRANSISTORS - BJT 60 V, 1 A NPN/PNP LOW VCESAT TRANSISTOR

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SOT1118
Discrete Semiconductor Products

PBSS4160PAN,115

Active
Nexperia USA Inc.

BIPOLAR TRANSISTORS - BJT 60 V, 1 A NPN/PNP LOW VCESAT TRANSISTOR

Technical Specifications

Parameters and characteristics for this part

SpecificationPBSS4160PAN,115
Current - Collector (Ic) (Max) [Max]1 A
Current - Collector Cutoff (Max) [Max]100 nA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]150
Frequency - Transition175 MHz
GradeAutomotive
Mounting TypeSurface Mount
Operating Temperature150 °C
Package / Case6-UFDFN Exposed Pad
Power - Max [Max]510 mW
QualificationAEC-Q100
Supplier Device Package6-HUSON (2x2)
Transistor Type2 NPN (Dual)
Vce Saturation (Max) @ Ib, Ic0.12 V
Voltage - Collector Emitter Breakdown (Max) [Max]60 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyN/A 1140$ 0.98
MouserN/A 1$ 0.62
10$ 0.41
100$ 0.28
500$ 0.22
1000$ 0.20
3000$ 0.15
9000$ 0.15
24000$ 0.14

Description

General part information

PBSS4160PAN Series

NPN/NPN low VCEsatBreakthrough In Small Signal (BISS) transistor in a leadless medium power DFN2020-6 (SOT1118) Surface-Mounted Device (SMD) plastic package.