Catalog
60 V, 1 A NPN/NPN low VCEsat transistor
Description
AI
NPN/NPN low VCEsatBreakthrough In Small Signal (BISS) transistor in a leadless medium power DFN2020-6 (SOT1118) Surface-Mounted Device (SMD) plastic package.
Beta
⌘K
60 V, 1 A NPN/NPN low VCEsat transistor
60 V, 1 A NPN/NPN low VCEsat transistor
| Part | Supplier Device Package | Grade | Transistor Type | Vce Saturation (Max) @ Ib, Ic | Voltage - Collector Emitter Breakdown (Max) [Max] | Operating Temperature | Current - Collector Cutoff (Max) [Max] | Power - Max [Max] | Frequency - Transition | Mounting Type | Current - Collector (Ic) (Max) [Max] | Package / Case | DC Current Gain (hFE) (Min) @ Ic, Vce [Min] | Qualification |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Nexperia USA Inc. | 6-HUSON (2x2) | Automotive | 2 NPN (Dual) | 0.12 V | 60 V | 150 °C | 100 nA | 510 mW | 175 MHz | Surface Mount | 1 A | 6-UFDFN Exposed Pad | 150 | AEC-Q100 |