Discrete Semiconductor Products
PSMNR58-30YLHX
ActiveNexperia USA Inc.
N-CHANNEL 30 V, 0.67 MΩ, 380 A LOGIC LEVEL MOSFET IN LFPAK56E USING NEXTPOWERS3 TECHNOLOGY
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Discrete Semiconductor Products
PSMNR58-30YLHX
ActiveNexperia USA Inc.
N-CHANNEL 30 V, 0.67 MΩ, 380 A LOGIC LEVEL MOSFET IN LFPAK56E USING NEXTPOWERS3 TECHNOLOGY
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Technical Specifications
Parameters and characteristics for this part
| Specification | PSMNR58-30YLHX |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 380 A |
| Drain to Source Voltage (Vdss) | 30 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10 V, 4.5 V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 188 nC |
| Input Capacitance (Ciss) (Max) @ Vds | 6160 pF |
| Mounting Type | Surface Mount |
| Operating Temperature [Max] | 175 °C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | SOT-1023, 4-LFPAK |
| Power Dissipation (Max) | 333 W |
| Rds On (Max) @ Id, Vgs [Max] | 0.67 mOhm |
| Supplier Device Package | Power-SO8, LFPAK56 |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 20 V |
| Vgs(th) (Max) @ Id | 2.2 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | N/A | 4 | $ 5.41 | |
Description
General part information
PSMNR58-30YLH Series
Logic level gate drive N-channel enhancement mode MOSFET in LFPAK56E package optimized for low RDSon. Low IDSSleakage even when hot, high efficiency and high current rated to 380 A, optimized for DC load switch and hot-swap applications.
Documents
Technical documentation and resources