Discrete Semiconductor Products

STH265N6F6-2AG

Obsolete

MOSFET N-CH 60V 180A H2PAK-2

Search across all available documentation for this part.

Discrete Semiconductor Products

Obsolete

MOSFET N-CH 60V 180A H2PAK-2

Technical Specifications

Parameters and characteristics for this part

Specification	STH265N6F6-2AG

Current - Continuous Drain (Id) @ 25°C	180 A
Drain to Source Voltage (Vdss)	60 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	183 nC
Grade	Automotive
Input Capacitance (Ciss) (Max) @ Vds [Max]	11800 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	175 °C
Operating Temperature [Min]	-55 °C
Package / Case	D2PAK (2 Leads + Tab), TO-263-3, TO-263AB
Power Dissipation (Max)	300 W
Qualification	AEC-Q101
Rds On (Max) @ Id, Vgs	2.1 mOhm
Supplier Device Package	H2Pak-2
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	4 V

Part	Operating Temperature [Max]	Operating Temperature [Min]	Gate Charge (Qg) (Max) @ Vgs [Max]	Qualification	Mounting Type	Rds On (Max) @ Id, Vgs	Technology	Vgs (Max)	Grade	Input Capacitance (Ciss) (Max) @ Vds [Max]	FET Type	Supplier Device Package	Vgs(th) (Max) @ Id	Package / Case	Power Dissipation (Max)	Drive Voltage (Max Rds On, Min Rds On)	Current - Continuous Drain (Id) @ 25°C	Drain to Source Voltage (Vdss)
STMicroelectronics STH265N6F6-6AG	175 °C	-55 °C	183 nC	AEC-Q101	Surface Mount	2.1 mOhm	MOSFET (Metal Oxide)	20 V	Automotive	11800 pF	N-Channel	H2PAK-6	4 V	D2PAK (6 Leads + Tab) TO-263-7	300 W	10 V	180 A	60 V
STMicroelectronics STH265N6F6-2AG	175 °C	-55 °C	183 nC	AEC-Q101	Surface Mount	2.1 mOhm	MOSFET (Metal Oxide)	20 V	Automotive	11800 pF	N-Channel	H2Pak-2	4 V	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	300 W	10 V	180 A	60 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	N/A	0	$ 1.48

General part information

N-Channel 60 V 180A (Tc) 300W (Tc) Surface Mount H2PAK-2

Technical documentation and resources

No documents available