Deep-Dive with AI
Search across all available documentation for this part.
Deep-Dive with AI
Technical Specifications
Parameters and characteristics for this part
| Specification | HUM2020B |
|---|---|
| Capacitance @ Vr, F | 4 pF |
| Diode Type | PIN - Single |
| Operating Temperature [Max] | 347 °F |
| Operating Temperature [Min] | -65 ░C |
| Package / Case | Axial |
| Power Dissipation (Max) [Max] | 13 W |
| Resistance @ If, F | 200 mOhm |
| Supplier Device Package | Axial |
| Voltage - Peak Reverse (Max) [Max] | 2 kV |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Microchip Direct | N/A | 1 | $ 123.91 | |
| 50 | $ 118.87 | |||
| 100 | $ 111.81 | |||
| 250 | $ 106.76 | |||
| 500 | $ 102.75 | |||
| 1000 | $ 100.74 | |||
Description
General part information
GC4600-High-Power-PIN Series
The high power PIN diode series is available in surface mount stud and insulated stud packages. These PIN diode chips utilize high resistivity material and an intrinsic float zone process technology thus ensuring low loss and low distortion characteristics through HF band. Due to a thick base width of the "I" layer, these diodes have very high reverse voltage characteristics with very low thermal impedance. These PIN chips are passivated with a proprietary high voltage glassivation process yielding low leakage stable devices.
Documents
Technical documentation and resources