Specification	UPA1818GR-9JG-E1-A

Current - Continuous Drain (Id) @ 25°C	10 A
Drain to Source Voltage (Vdss)	20 V
FET Type	P-Channel
Gate Charge (Qg) (Max) @ Vgs	20 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]	2200 pF
Mounting Type	Surface Mount
Package / Case	0.173 in
Package / Case	8-TSSOP
Package / Case	4.4 mm
Rds On (Max) @ Id, Vgs	15.2 mOhm
Supplier Device Package	8-TSSOP
Technology	MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id	1.5 V

UPA1818GR Series

N-Channel Mos Field Effect Transistor For Switching

Part	Package / Case	Package / Case	Package / Case	Supplier Device Package	FET Type	Current - Continuous Drain (Id) @ 25°C	Mounting Type	Gate Charge (Qg) (Max) @ Vgs	Drain to Source Voltage (Vdss)	Rds On (Max) @ Id, Vgs	Input Capacitance (Ciss) (Max) @ Vds [Max]	Technology	Vgs(th) (Max) @ Id
Renesas Electronics Corporation UPA1818GR-9JG-E1-A	0.173 in	8-TSSOP	4.4 mm	8-TSSOP	P-Channel	10 A	Surface Mount	20 nC	20 V	15.2 mOhm	2200 pF	MOSFET (Metal Oxide)	1.5 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

The UPA1818GR is a N-Channel Mos Field Effect Transistor For Switching.

Technical documentation and resources