N-Channel Mos Field Effect Transistor For Switching
N-Channel Mos Field Effect Transistor For Switching
N-Channel Mos Field Effect Transistor For Switching
| Part | FET Type | Technology | Supplier Device Package | Drain to Source Voltage (Vdss) | Package / Case | Package / Case [custom] | Package / Case [custom] | Rds On (Max) @ Id, Vgs [Max] | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | Mounting Type | Input Capacitance (Ciss) (Max) @ Vds | Vgs(th) (Max) @ Id |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 Renesas Electronics Corporation | P-Channel | MOSFET (Metal Oxide) | 8-TSSOP | 20 V | 8-TSSOP | 0.173 " | 4.4 mm | 15.2 mOhm | 10 A | 20 nC | Surface Mount | 2200 pF | 1.5 V |