Specification	FFSB0865B

Capacitance @ Vr, F	336 pF
Current - Average Rectified (Io)	10.1 A
Current - Reverse Leakage @ Vr	40 µA
Mounting Type	Surface Mount
Operating Temperature - Junction [Max]	175 ░C
Operating Temperature - Junction [Min]	-55 C
Package / Case	D2PAK (2 Leads + Tab), TO-263AB, TO-263-3
Speed	No Recovery Time
Supplier Device Package	TO-263 (D2PAK)
Technology	SiC (Silicon Carbide) Schottky
Voltage - DC Reverse (Vr) (Max) [Max]	650 V
Voltage - Forward (Vf) (Max) @ If	1.7 V

FFSB0865B-F085 Series

Silicon Carbide (SiC) Schottky Diode – EliteSiC, 8 A, 650 V, D1, D2PAK-2L

Part	Supplier Device Package	Reverse Recovery Time (trr)	Capacitance @ Vr, F	Voltage - DC Reverse (Vr) (Max) [Max]	Speed	Voltage - Forward (Vf) (Max) @ If	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]	Current - Average Rectified (Io)	Package / Case	Technology	Current - Reverse Leakage @ Vr	Mounting Type
ON Semiconductor FFSB0865A	TO-263 (D2PAK)	0 ns	463 pF	650 V	No Recovery Time	1.75 V	175 ░C	-55 C	15.4 A	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	SiC (Silicon Carbide) Schottky	200 µA	Surface Mount
ON Semiconductor FFSB0865B-F085	TO-263 (D2PAK)	0 ns	336 pF	650 V	No Recovery Time	1.7 V	175 ░C	-55 C	10.1 A	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	SiC (Silicon Carbide) Schottky	40 µA	Surface Mount
ON Semiconductor FFSB0865B	TO-263 (D2PAK)		336 pF	650 V	No Recovery Time	1.7 V	175 ░C	-55 C	10.1 A	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	SiC (Silicon Carbide) Schottky	40 µA	Surface Mount

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Cut Tape (CT)	1	$ 3.29
		10	$ 2.14
		100	$ 1.49
	Tape & Reel (TR)	800	$ 1.03
ON Semiconductor	N/A	1	$ 0.95

Description

General part information

FFSB0865B-F085 Series

Silicon Carbide (SiC) Schottky Diodes use a completely new technology that provides superior switching performance and higher reliability compared to Silicon. No reverse recovery current, temperature independent switching characteristics, and excellent thermal performance sets Silicon Carbide as the next generation of power semiconductor. System benefits include highest efficiency, faster operating frequency, increased power density, reduced EMI, and reduced system size and cost.