FFSB0865B-F085 Series

Silicon Carbide (SiC) Schottky Diode – EliteSiC, 8 A, 650 V, D1, D2PAK-2L

Catalog

Silicon Carbide (SiC) Schottky Diode – EliteSiC, 8 A, 650 V, D1, D2PAK-2L

Part	Supplier Device Package	Reverse Recovery Time (trr)	Capacitance @ Vr, F	Voltage - DC Reverse (Vr) (Max) [Max]	Speed	Voltage - Forward (Vf) (Max) @ If	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]	Current - Average Rectified (Io)	Package / Case	Technology	Current - Reverse Leakage @ Vr	Mounting Type
ON Semiconductor FFSB0865A	TO-263 (D2PAK)	0 ns	463 pF	650 V	No Recovery Time	1.75 V	175 ░C	-55 C	15.4 A	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	SiC (Silicon Carbide) Schottky	200 µA	Surface Mount
ON Semiconductor FFSB0865B-F085	TO-263 (D2PAK)	0 ns	336 pF	650 V	No Recovery Time	1.7 V	175 ░C	-55 C	10.1 A	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	SiC (Silicon Carbide) Schottky	40 µA	Surface Mount
ON Semiconductor FFSB0865B	TO-263 (D2PAK)		336 pF	650 V	No Recovery Time	1.7 V	175 ░C	-55 C	10.1 A	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	SiC (Silicon Carbide) Schottky	40 µA	Surface Mount

Catalog

Silicon Carbide (SiC) Schottky Diode – EliteSiC, 8 A, 650 V, D1, D2PAK-2L

Key Features

• Max Junction Temperature 175 oC

• Avalanche Rated 33 mJ

• High Surge Current Capacity

• Positive Temperature Coefficient

• Ease of Paralleling

• No Reverse Recovery / No Forward Recovery

• AEC-Q101 Qualified

Description

Silicon Carbide (SiC) Schottky Diodes use a completely new technology that provides superior switching performance and higher reliability compared to Silicon. No reverse recovery current, temperature independent switching characteristics, and excellent thermal performance sets Silicon Carbide as the next generation of power semiconductor. System benefits include highest efficiency, faster operating frequency, increased power density, reduced EMI, and reduced system size and cost.