TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

Discrete Semiconductor Products

IPB80P04P4L08ATMA1

Obsolete

INFINEON

MOSFET P-CH 40V 80A TO263-3

Deep-Dive with AI

Search across all available documentation for this part.

DocumentsDatasheet

Discrete Semiconductor Products

IPB80P04P4L08ATMA1

Obsolete

INFINEON

MOSFET P-CH 40V 80A TO263-3

Deep-Dive with AI

DocumentsDatasheet

Specifications Series Pricing Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	IPB80P04P4L08ATMA1

Drain to Source Voltage (Vdss)	40 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	P-Channel
Gate Charge (Qg) (Max) @ Vgs	92 nC
Grade	Automotive
Input Capacitance (Ciss) (Max) @ Vds [Max]	5430 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	175 °C
Operating Temperature [Min]	-55 °C
Package / Case	D2PAK (2 Leads + Tab), TO-263-3, TO-263AB
Power Dissipation (Max)	75 W
Qualification	AEC-Q101
Rds On (Max) @ Id, Vgs	7.9 mOhm
Supplier Device Package	PG-TO263-3-2
Technology	MOSFET (Metal Oxide)
Vgs (Max)	16 V
Vgs(th) (Max) @ Id	2.2 V

IPB80P Series

Part	Rds On (Max) @ Id, Vgs	Package / Case	Qualification	Supplier Device Package	Mounting Type	Drive Voltage (Max Rds On, Min Rds On)	Gate Charge (Qg) (Max) @ Vgs [Max]	FET Type	Power Dissipation (Max)	Vgs (Max)	Grade	Drain to Source Voltage (Vdss)	Technology	Operating Temperature [Max]	Operating Temperature [Min]	Vgs(th) (Max) @ Id	Input Capacitance (Ciss) (Max) @ Vds [Max]	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Vgs (Max) [Max]	Vgs (Max) [Min]	Rds On (Max) @ Id, Vgs [Max]
INFINEON IPB80P03P405ATMA1	4.7 mOhm	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	AEC-Q101	PG-TO263-3-2	Surface Mount	10 V	130 nC	P-Channel	137 W	20 V	Automotive	30 V	MOSFET (Metal Oxide)	175 °C	-55 °C	4 V	10300 pF
INFINEON IPB80P04P407ATMA1	7.4 mOhm	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	AEC-Q101	PG-TO263-3-2	Surface Mount	10 V		P-Channel	88 W	20 V	Automotive	40 V	MOSFET (Metal Oxide)	175 °C	-55 °C	4 V		89 nC	6085 pF
INFINEON IPB80P03P4L04ATMA1	4.1 mOhm	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	AEC-Q101	PG-TO263-3-2	Surface Mount	4.5 V 10 V		P-Channel	137 W		Automotive	30 V	MOSFET (Metal Oxide)	175 °C	-55 °C	2 V		160 nC	11300 pF	5 V	-16 V
INFINEON IPB80P03P4L07ATMA1	6.9 mOhm	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	AEC-Q101	PG-TO263-3-2	Surface Mount	4.5 V 10 V	80 nC	P-Channel	88 W		Automotive	30 V	MOSFET (Metal Oxide)	175 °C	-55 °C	2 V	5700 pF			5 V	-16 V
INFINEON IPB80P04P405ATMA2	5.2 mOhm	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	AEC-Q101	PG-TO263-3-2	Surface Mount		151 nC	P-Channel	125 W	20 V	Automotive	40 V	MOSFET (Metal Oxide)	175 °C	-55 °C	4 V	10300 pF
INFINEON IPB80P04P405ATMA1		D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	AEC-Q101	PG-TO263-3-2	Surface Mount	10 V	151 nC	P-Channel	125 W	20 V	Automotive	40 V	MOSFET (Metal Oxide)	175 °C	-55 °C	4 V	10300 pF					4.9 mOhm
INFINEON IPB80P03P4L04ATMA2	4.4 mOhm	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	AEC-Q101	PG-TO263-3-2	Surface Mount			P-Channel	137 W		Automotive	30 V	MOSFET (Metal Oxide)	175 °C	-55 °C	2 V		160 nC	11300 pF	5 V	-16 V
INFINEON IPB80P04P4L06ATMA1	6.4 mOhm	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	AEC-Q101	PG-TO263-3-2	Surface Mount	4.5 V 10 V		P-Channel	88 W	16 V	Automotive	40 V	MOSFET (Metal Oxide)	175 °C	-55 °C	2.2 V	6580 pF	104 nC
INFINEON IPB80P04P4L08ATMA1	7.9 mOhm	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	AEC-Q101	PG-TO263-3-2	Surface Mount	4.5 V 10 V		P-Channel	75 W	16 V	Automotive	40 V	MOSFET (Metal Oxide)	175 °C	-55 °C	2.2 V	5430 pF	92 nC

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	N/A	0	$ 0.95

Description

General part information

IPB80P Series

P-Channel 40 V 80A (Tc) 75W (Tc) Surface Mount PG-TO263-3-2

Documents

Technical documentation and resources