IPB80P Series
Manufacturer: INFINEON
MOSFET P-CH 30V 80A TO263-3
| Part | Rds On (Max) @ Id, Vgs | Package / Case | Qualification | Supplier Device Package | Mounting Type | Drive Voltage (Max Rds On, Min Rds On) | Gate Charge (Qg) (Max) @ Vgs [Max] | FET Type | Power Dissipation (Max) | Vgs (Max) | Grade | Drain to Source Voltage (Vdss) | Technology | Operating Temperature [Max] | Operating Temperature [Min] | Vgs(th) (Max) @ Id | Input Capacitance (Ciss) (Max) @ Vds [Max] | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Vgs (Max) [Max] | Vgs (Max) [Min] | Rds On (Max) @ Id, Vgs [Max] |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
INFINEON | 4.7 mOhm | D2PAK (2 Leads + Tab) TO-263-3 TO-263AB | AEC-Q101 | PG-TO263-3-2 | Surface Mount | 10 V | 130 nC | P-Channel | 137 W | 20 V | Automotive | 30 V | MOSFET (Metal Oxide) | 175 °C | -55 °C | 4 V | 10300 pF | |||||
INFINEON | 7.4 mOhm | D2PAK (2 Leads + Tab) TO-263-3 TO-263AB | AEC-Q101 | PG-TO263-3-2 | Surface Mount | 10 V | P-Channel | 88 W | 20 V | Automotive | 40 V | MOSFET (Metal Oxide) | 175 °C | -55 °C | 4 V | 89 nC | 6085 pF | |||||
INFINEON | 4.1 mOhm | D2PAK (2 Leads + Tab) TO-263-3 TO-263AB | AEC-Q101 | PG-TO263-3-2 | Surface Mount | 4.5 V 10 V | P-Channel | 137 W | Automotive | 30 V | MOSFET (Metal Oxide) | 175 °C | -55 °C | 2 V | 160 nC | 11300 pF | 5 V | -16 V | ||||
INFINEON | 6.9 mOhm | D2PAK (2 Leads + Tab) TO-263-3 TO-263AB | AEC-Q101 | PG-TO263-3-2 | Surface Mount | 4.5 V 10 V | 80 nC | P-Channel | 88 W | Automotive | 30 V | MOSFET (Metal Oxide) | 175 °C | -55 °C | 2 V | 5700 pF | 5 V | -16 V | ||||
INFINEON | 5.2 mOhm | D2PAK (2 Leads + Tab) TO-263-3 TO-263AB | AEC-Q101 | PG-TO263-3-2 | Surface Mount | 151 nC | P-Channel | 125 W | 20 V | Automotive | 40 V | MOSFET (Metal Oxide) | 175 °C | -55 °C | 4 V | 10300 pF | ||||||
INFINEON | D2PAK (2 Leads + Tab) TO-263-3 TO-263AB | AEC-Q101 | PG-TO263-3-2 | Surface Mount | 10 V | 151 nC | P-Channel | 125 W | 20 V | Automotive | 40 V | MOSFET (Metal Oxide) | 175 °C | -55 °C | 4 V | 10300 pF | 4.9 mOhm | |||||
INFINEON | 4.4 mOhm | D2PAK (2 Leads + Tab) TO-263-3 TO-263AB | AEC-Q101 | PG-TO263-3-2 | Surface Mount | P-Channel | 137 W | Automotive | 30 V | MOSFET (Metal Oxide) | 175 °C | -55 °C | 2 V | 160 nC | 11300 pF | 5 V | -16 V | |||||
INFINEON | 6.4 mOhm | D2PAK (2 Leads + Tab) TO-263-3 TO-263AB | AEC-Q101 | PG-TO263-3-2 | Surface Mount | 4.5 V 10 V | P-Channel | 88 W | 16 V | Automotive | 40 V | MOSFET (Metal Oxide) | 175 °C | -55 °C | 2.2 V | 6580 pF | 104 nC | |||||
INFINEON | 7.9 mOhm | D2PAK (2 Leads + Tab) TO-263-3 TO-263AB | AEC-Q101 | PG-TO263-3-2 | Surface Mount | 4.5 V 10 V | P-Channel | 75 W | 16 V | Automotive | 40 V | MOSFET (Metal Oxide) | 175 °C | -55 °C | 2.2 V | 5430 pF | 92 nC |