Discrete Semiconductor Products
PMDXB590UPEZ
ActiveNexperia USA Inc.
20 V, DUAL P-CHANNEL TRENCH MOSFET
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Search across all available documentation for this part.
Discrete Semiconductor Products
PMDXB590UPEZ
ActiveNexperia USA Inc.
20 V, DUAL P-CHANNEL TRENCH MOSFET
Deep-Dive with AI
Technical Specifications
Parameters and characteristics for this part
| Specification | PMDXB590UPEZ |
|---|---|
| Configuration | 2 P-Channel (Dual) |
| Current - Continuous Drain (Id) @ 25°C | 2.3 A, 570 mA |
| Drain to Source Voltage (Vdss) | 20 V |
| Gate Charge (Qg) (Max) @ Vgs | 0.8 nC |
| Input Capacitance (Ciss) (Max) @ Vds | 53.5 pF |
| Mounting Type | Surface Mount |
| Operating Temperature [Max] | 150 °C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | 6-XFDFN Exposed Pad |
| Power - Max | 280 mW, 6 W |
| Rds On (Max) @ Id, Vgs | 770 mOhm |
| Supplier Device Package | DFN1010B-6 |
| Technology | MOSFET (Metal Oxide) |
| Vgs(th) (Max) @ Id | 1 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | N/A | 0 | $ 0.52 | |
Description
General part information
PMDXB590UPE Series
Dual P-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1010B-6 (SOT1216) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
Documents
Technical documentation and resources