20 V, dual P-channel Trench MOSFET
20 V, dual P-channel Trench MOSFET
| Part | Technology | Power - Max | Operating Temperature [Max] | Operating Temperature [Min] | Rds On (Max) @ Id, Vgs | Mounting Type | Package / Case | Supplier Device Package | Gate Charge (Qg) (Max) @ Vgs | Current - Continuous Drain (Id) @ 25°C | Input Capacitance (Ciss) (Max) @ Vds | Vgs(th) (Max) @ Id | Configuration | Drain to Source Voltage (Vdss) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 Nexperia USA Inc. | MOSFET (Metal Oxide) | 6 W 280 mW | 150 °C | -55 °C | 770 mOhm | Surface Mount | 6-XFDFN Exposed Pad | DFN1010B-6 | 0.8 nC | 2.3 A 570 mA | 53.5 pF | 1 V | 2 P-Channel (Dual) | 20 V |