Discrete Semiconductor Products

SI1050X-T1-E3

Obsolete

MOSFET N-CH 8V 1.34A SC89-6

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Discrete Semiconductor Products

Obsolete

MOSFET N-CH 8V 1.34A SC89-6

Technical Specifications

Parameters and characteristics for this part

Specification	SI1050X-T1-E3

Current - Continuous Drain (Id) @ 25°C	1.34 A
Drain to Source Voltage (Vdss)	8 V
Drive Voltage (Max Rds On, Min Rds On)	4.5 V, 1.5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	11.6 nC
Input Capacitance (Ciss) (Max) @ Vds	585 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	SOT-666, SOT-563
Power Dissipation (Max) [Max]	236 mW
Rds On (Max) @ Id, Vgs	86 mOhm
Supplier Device Package	SC-89 (SOT-563F)
Technology	MOSFET (Metal Oxide)
Vgs (Max)	5 V
Vgs(th) (Max) @ Id	900 mV

Part	Technology	Mounting Type	Current - Continuous Drain (Id) @ 25°C	Drain to Source Voltage (Vdss)	Vgs(th) (Max) @ Id	Package / Case	Operating Temperature [Min]	Operating Temperature [Max]	Gate Charge (Qg) (Max) @ Vgs	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	FET Type	Input Capacitance (Ciss) (Max) @ Vds	Power Dissipation (Max) [Max]	Vgs (Max)	Supplier Device Package
Vishay General Semiconductor - Diodes Division SI1050X-T1-E3	MOSFET (Metal Oxide)	Surface Mount	1.34 A	8 V	900 mV	SOT-563 SOT-666	-55 °C	150 °C	11.6 nC	1.5 V 4.5 V	86 mOhm	N-Channel	585 pF	236 mW	5 V	SC-89 (SOT-563F)
Vishay General Semiconductor - Diodes Division SI1050X-T1-GE3	MOSFET (Metal Oxide)	Surface Mount	1.34 A	8 V	900 mV	SOT-563 SOT-666	-55 °C	150 °C	11.6 nC	1.5 V 4.5 V	86 mOhm	N-Channel	585 pF	236 mW	5 V	SC-89 (SOT-563F)

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

N-Channel 8 V 1.34A (Ta) 236mW (Ta) Surface Mount SC-89 (SOT-563F)

Technical documentation and resources