SI1050 Series
Manufacturer: Vishay General Semiconductor - Diodes Division
MOSFET N-CH 8V 1.34A SC89-6
| Part | Technology | Mounting Type | Current - Continuous Drain (Id) @ 25°C | Drain to Source Voltage (Vdss) | Vgs(th) (Max) @ Id | Package / Case | Operating Temperature [Min] | Operating Temperature [Max] | Gate Charge (Qg) (Max) @ Vgs | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Power Dissipation (Max) [Max] | Vgs (Max) | Supplier Device Package |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Vishay General Semiconductor - Diodes Division | MOSFET (Metal Oxide) | Surface Mount | 1.34 A | 8 V | 900 mV | SOT-563 SOT-666 | -55 °C | 150 °C | 11.6 nC | 1.5 V 4.5 V | 86 mOhm | N-Channel | 585 pF | 236 mW | 5 V | SC-89 (SOT-563F) |
Vishay General Semiconductor - Diodes Division | MOSFET (Metal Oxide) | Surface Mount | 1.34 A | 8 V | 900 mV | SOT-563 SOT-666 | -55 °C | 150 °C | 11.6 nC | 1.5 V 4.5 V | 86 mOhm | N-Channel | 585 pF | 236 mW | 5 V | SC-89 (SOT-563F) |