Discrete Semiconductor Products

SI4559ADY-T1-E3

LTB

MOSFET N/P-CH 60V 5.3A 8SOIC

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Discrete Semiconductor Products

LTB

MOSFET N/P-CH 60V 5.3A 8SOIC

Technical Specifications

Parameters and characteristics for this part

Specification	SI4559ADY-T1-E3

Configuration	N and P-Channel
Current - Continuous Drain (Id) @ 25°C	3.9 A, 5.3 A
Drain to Source Voltage (Vdss)	60 V
FET Feature	Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs	22 nC
Gate Charge (Qg) (Max) @ Vgs	20 nC
Input Capacitance (Ciss) (Max) @ Vds	665 pF, 650 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	8-SOIC
Package / Case [x]	0.154 in
Package / Case [y]	3.9 mm
Power - Max	3.1 W, 3.4 W
Rds On (Max) @ Id, Vgs	58 mOhm
Supplier Device Package	8-SOIC
Technology	MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id	3 V

Part	Vgs(th) (Max) @ Id	Configuration	Power - Max	Technology	Mounting Type	Operating Temperature [Min]	Operating Temperature [Max]	FET Feature	Package / Case	Package / Case [y]	Package / Case [x]	Rds On (Max) @ Id, Vgs	Drain to Source Voltage (Vdss)	Input Capacitance (Ciss) (Max) @ Vds	Gate Charge (Qg) (Max) @ Vgs	Gate Charge (Qg) (Max) @ Vgs	Supplier Device Package	Current - Continuous Drain (Id) @ 25°C
Vishay General Semiconductor - Diodes Division SI4559ADY-T1-E3	3 V	N and P-Channel	3.1 W 3.4 W	MOSFET (Metal Oxide)	Surface Mount	-55 °C	150 °C	Logic Level Gate	8-SOIC	3.9 mm	0.154 in	58 mOhm	60 V	650 pF 665 pF	22 nC	20 nC	8-SOIC	3.9 A 5.3 A
Vishay General Semiconductor - Diodes Division SI4559ADY-T1-GE3	3 V	N and P-Channel	3.1 W 3.4 W	MOSFET (Metal Oxide)	Surface Mount	-55 °C	150 °C	Logic Level Gate	8-SOIC	3.9 mm	0.154 in	58 mOhm	60 V	650 pF 665 pF	22 nC	20 nC	8-SOIC	3.9 A 5.3 A

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

Mosfet Array 60V 5.3A, 3.9A 3.1W, 3.4W Surface Mount 8-SOIC

Technical documentation and resources