SI4559 Series

Catalog

MOSFET N/P-CH 60V 5.3A 8SOIC

Part	Vgs(th) (Max) @ Id	Configuration	Power - Max	Technology	Mounting Type	Operating Temperature [Min]	Operating Temperature [Max]	FET Feature	Package / Case	Package / Case [y]	Package / Case [x]	Rds On (Max) @ Id, Vgs	Drain to Source Voltage (Vdss)	Input Capacitance (Ciss) (Max) @ Vds	Gate Charge (Qg) (Max) @ Vgs	Gate Charge (Qg) (Max) @ Vgs	Supplier Device Package	Current - Continuous Drain (Id) @ 25°C
Vishay General Semiconductor - Diodes Division SI4559ADY-T1-E3	3 V	N and P-Channel	3.1 W 3.4 W	MOSFET (Metal Oxide)	Surface Mount	-55 °C	150 °C	Logic Level Gate	8-SOIC	3.9 mm	0.154 in	58 mOhm	60 V	650 pF 665 pF	22 nC	20 nC	8-SOIC	3.9 A 5.3 A
Vishay General Semiconductor - Diodes Division SI4559ADY-T1-GE3	3 V	N and P-Channel	3.1 W 3.4 W	MOSFET (Metal Oxide)	Surface Mount	-55 °C	150 °C	Logic Level Gate	8-SOIC	3.9 mm	0.154 in	58 mOhm	60 V	650 pF 665 pF	22 nC	20 nC	8-SOIC	3.9 A 5.3 A