Specification	BSS138BK,215

Current - Continuous Drain (Id) @ 25°C	360 mA
Drain to Source Voltage (Vdss)	60 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	0.7 nC
Grade	Automotive
Input Capacitance (Ciss) (Max) @ Vds	56 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	SOT-23-3, TO-236-3, SC-59
Power Dissipation (Max)	350 mW, 1.14 W
Qualification	AEC-Q101
Rds On (Max) @ Id, Vgs	1.6 Ohm
Supplier Device Package	TO-236AB
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	1.6 V

BSS138BK Series

60 V, 360 mA N-channel Trench MOSFET

Part	Vgs (Max)	Vgs(th) (Max) @ Id	Rds On (Max) @ Id, Vgs	Drain to Source Voltage (Vdss)	Drive Voltage (Max Rds On, Min Rds On)	Current - Continuous Drain (Id) @ 25°C	Package / Case	Operating Temperature [Max]	Operating Temperature [Min]	Supplier Device Package	Technology	Input Capacitance (Ciss) (Max) @ Vds	Gate Charge (Qg) (Max) @ Vgs	FET Type	Mounting Type	Grade	Power Dissipation (Max)	Qualification
Nexperia USA Inc. BSS138BK,215	20 V	1.6 V	1.6 Ohm	60 V	10 V	360 mA	SC-59 SOT-23-3 TO-236-3	150 °C	-55 °C	TO-236AB	MOSFET (Metal Oxide)	56 pF	0.7 nC	N-Channel	Surface Mount	Automotive	1.14 W 350 mW	AEC-Q101

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	N/A	0	$ 0.35

Description

General part information

BSS138BK Series

N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.