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60 V, 360 mA N-channel Trench MOSFET
Description
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N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
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60 V, 360 mA N-channel Trench MOSFET
60 V, 360 mA N-channel Trench MOSFET
| Part | Vgs (Max) | Vgs(th) (Max) @ Id | Rds On (Max) @ Id, Vgs | Drain to Source Voltage (Vdss) | Drive Voltage (Max Rds On, Min Rds On) | Current - Continuous Drain (Id) @ 25°C | Package / Case | Operating Temperature [Max] | Operating Temperature [Min] | Supplier Device Package | Technology | Input Capacitance (Ciss) (Max) @ Vds | Gate Charge (Qg) (Max) @ Vgs | FET Type | Mounting Type | Grade | Power Dissipation (Max) | Qualification |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Nexperia USA Inc. | 20 V | 1.6 V | 1.6 Ohm | 60 V | 10 V | 360 mA | SC-59 SOT-23-3 TO-236-3 | 150 °C | -55 °C | TO-236AB | MOSFET (Metal Oxide) | 56 pF | 0.7 nC | N-Channel | Surface Mount | Automotive | 1.14 W 350 mW | AEC-Q101 |