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TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Discrete Semiconductor Products

SPB80N04S2-04

Obsolete
INFINEON

MOSFET N-CH 40V 80A TO263-3

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DocumentsDatasheet
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Discrete Semiconductor Products

SPB80N04S2-04

Obsolete
INFINEON

MOSFET N-CH 40V 80A TO263-3

Deep-Dive with AI

DocumentsDatasheet

Technical Specifications

Parameters and characteristics for this part

SpecificationSPB80N04S2-04
Drain to Source Voltage (Vdss)40 V
Drive Voltage (Max Rds On, Min Rds On)10 V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs170 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]6980 pF
Mounting TypeSurface Mount
Operating Temperature [Max]175 °C
Operating Temperature [Min]-55 °C
Package / CaseD2PAK (2 Leads + Tab), TO-263-3, TO-263AB
Power Dissipation (Max)300 W
Rds On (Max) @ Id, Vgs3.4 mOhm
Supplier Device PackagePG-TO263-3-2
TechnologyMOSFET (Metal Oxide)
Vgs (Max)20 V
Vgs(th) (Max) @ Id4 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyN/A 0$ 1.87

Description

General part information

SPB80N Series

N-Channel 40 V 80A (Tc) 300W (Tc) Surface Mount PG-TO263-3-2

Documents

Technical documentation and resources