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PG-TO263-3-2
Discrete Semiconductor Products

SPB80N06S08ATMA1

Obsolete
INFINEON

MOSFET N-CH 55V 80A TO263-3

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PG-TO263-3-2
Discrete Semiconductor Products

SPB80N06S08ATMA1

Obsolete
INFINEON

MOSFET N-CH 55V 80A TO263-3

Deep-Dive with AI

DocumentsDatasheet

Technical Specifications

Parameters and characteristics for this part

SpecificationSPB80N06S08ATMA1
Drain to Source Voltage (Vdss)55 V
Drive Voltage (Max Rds On, Min Rds On)10 V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]187 nC
GradeAutomotive
Input Capacitance (Ciss) (Max) @ Vds3660 pF
Mounting TypeSurface Mount
Operating Temperature [Max]175 °C
Operating Temperature [Min]-55 °C
Package / CaseD2PAK (2 Leads + Tab), TO-263-3, TO-263AB
Power Dissipation (Max)300 W
QualificationAEC-Q101
Rds On (Max) @ Id, Vgs7.7 mOhm
Supplier Device PackagePG-TO263-3-2
TechnologyMOSFET (Metal Oxide)
Vgs (Max)20 V
Vgs(th) (Max) @ Id4 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyN/A 0$ 0.00

Description

General part information

SPB80N Series

N-Channel 55 V 80A (Tc) 300W (Tc) Surface Mount PG-TO263-3-2

Documents

Technical documentation and resources