Discrete Semiconductor Products

BYC20DX-600PQ

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DIODE GEN PURP 600V 20A TO220F

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Discrete Semiconductor Products

Active

DIODE GEN PURP 600V 20A TO220F

Technical Specifications

Parameters and characteristics for this part

Specification	BYC20DX-600PQ

Current - Reverse Leakage @ Vr	10 µA
Mounting Type	Through Hole
Operating Temperature - Junction [Max]	175 ░C
Package / Case	TO-220-2 Full Pack, Isolated Tab
Reverse Recovery Time (trr)	20 ns
Speed	500 ns, 200 mA
Supplier Device Package	TO-220F
Technology	Standard
Voltage - DC Reverse (Vr) (Max) [Max]	600 V
Voltage - Forward (Vf) (Max) @ If	2.9 V

Part	Voltage - Forward (Vf) (Max) @ If	Voltage - DC Reverse (Vr) (Max) [Max]	Speed	Technology	Package / Case	Reverse Recovery Time (trr)	Mounting Type	Current - Reverse Leakage @ Vr	Operating Temperature - Junction [Max]	Supplier Device Package
WeEn Semiconductors BYC20-600,127	2.9 V	500 V	200 mA 500 ns	Standard	TO-220-2	55 ns	Through Hole	200 µA	150 °C	TO-220AC
WeEn Semiconductors BYC20X-600,127	2.9 V	500 V	200 mA 500 ns	Standard	TO-220-2 Full Pack Isolated Tab	55 ns	Through Hole	200 µA	150 °C	TO-220FP
WeEn Semiconductors BYC20X-600PQ	2.5 V	600 V	200 mA 500 ns	Standard	TO-220-2 Full Pack Isolated Tab	35 ns	Through Hole	10 µA	175 ░C	TO-220FP
WeEn Semiconductors BYC20D-600PQ	2.9 V	600 V	200 mA 500 ns	Standard	TO-220-2	20 ns	Through Hole	10 µA	175 ░C	TO-220AC
WeEn Semiconductors BYC20DX-600PQ	2.9 V	600 V	200 mA 500 ns	Standard	TO-220-2 Full Pack Isolated Tab	20 ns	Through Hole	10 µA	175 ░C	TO-220F

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

Diode 600 V 20A Through Hole TO-220F

Technical documentation and resources

No documents available