Specification	HGTP10N120BN

Current - Collector (Ic) (Max) [Max]	35 A
Current - Collector Pulsed (Icm)	80 A
Gate Charge	100 nC
IGBT Type	NPT
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-220-3
Power - Max [Max]	298 W
Supplier Device Package	TO-220-3
Switching Energy	800 µJ, 320 µJ
Td (on/off) @ 25°C [custom]	23 ns
Td (on/off) @ 25°C [custom]	165 ns
Test Condition	10 Ohm, 960 V, 15 V, 10 A
Vce(on) (Max) @ Vge, Ic	2.7 V
Voltage - Collector Emitter Breakdown (Max) [Max]	1200 V

HGTP10N120BN Series

1200V, NPT IGBT

Part	Package / Case	Td (on/off) @ 25°C [custom]	Td (on/off) @ 25°C [custom]	Current - Collector (Ic) (Max) [Max]	Power - Max [Max]	Gate Charge	IGBT Type	Mounting Type	Current - Collector Pulsed (Icm)	Supplier Device Package	Vce(on) (Max) @ Vge, Ic	Operating Temperature [Min]	Operating Temperature [Max]	Switching Energy	Voltage - Collector Emitter Breakdown (Max) [Max]	Test Condition
ON Semiconductor HGTP10N120BN	TO-220-3	23 ns	165 ns	35 A	298 W	100 nC	NPT	Through Hole	80 A	TO-220-3	2.7 V	-55 °C	150 °C	320 µJ 800 µJ	1200 V	10 Ohm 10 A 15 V 960 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Description

General part information

HGTP10N120BN Series

HGTP10N120BN is based on Non- Punch Through(NPT) IGBT designs. The IGBT is ideal for many high voltage switching applications operating at moderate frequencies where low conduction losses are essential, such as: UPS, solar inverter, motor control and power supplies.