HGTP10N120BN Series

1200V, NPT IGBT

Catalog

1200V, NPT IGBT

Part	Package / Case	Td (on/off) @ 25°C [custom]	Td (on/off) @ 25°C [custom]	Current - Collector (Ic) (Max) [Max]	Power - Max [Max]	Gate Charge	IGBT Type	Mounting Type	Current - Collector Pulsed (Icm)	Supplier Device Package	Vce(on) (Max) @ Vge, Ic	Operating Temperature [Min]	Operating Temperature [Max]	Switching Energy	Voltage - Collector Emitter Breakdown (Max) [Max]	Test Condition
ON Semiconductor HGTP10N120BN	TO-220-3	23 ns	165 ns	35 A	298 W	100 nC	NPT	Through Hole	80 A	TO-220-3	2.7 V	-55 °C	150 °C	320 µJ 800 µJ	1200 V	10 Ohm 10 A 15 V 960 V

Catalog

1200V, NPT IGBT

Key Features

• 17A, 1200V, TC= 110°C

• Low saturation voltage: VCE(sat) = 2.45V @ IC= 10A

• Typical Fall Time. . . . . . . . . .140ns at TJ= 150°C

• Short Circuit Rating

• Low Conduction Loss

Description

HGTP10N120BN is based on Non- Punch Through(NPT) IGBT designs. The IGBT is ideal for many high voltage switching applications operating at moderate frequencies where low conduction losses are essential, such as: UPS, solar inverter, motor control and power supplies.