Discrete Semiconductor Products

SI5517DU-T1-GE3

LTB

MOSFET N/P-CH 20V 6A CHIPFET

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Discrete Semiconductor Products

LTB

MOSFET N/P-CH 20V 6A CHIPFET

Technical Specifications

Parameters and characteristics for this part

Specification	SI5517DU-T1-GE3

Configuration	N and P-Channel
Current - Continuous Drain (Id) @ 25°C	6 A
Drain to Source Voltage (Vdss)	20 V
FET Feature	Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs [Max]	16 nC
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	PowerPAK® ChipFET™ Dual
Power - Max [Max]	8.3 W
Rds On (Max) @ Id, Vgs [Max]	39 mOhm
Supplier Device Package	PowerPAK® ChipFet Dual
Technology	MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id	1 V

Part	Rds On (Max) @ Id, Vgs [Max]	Gate Charge (Qg) (Max) @ Vgs [Max]	Package / Case	Drain to Source Voltage (Vdss)	Supplier Device Package	Configuration	Current - Continuous Drain (Id) @ 25°C	FET Feature	Power - Max [Max]	Technology	Mounting Type	Operating Temperature [Min]	Operating Temperature [Max]	Vgs(th) (Max) @ Id
Vishay General Semiconductor - Diodes Division SI5517DU-T1-GE3	39 mOhm	16 nC	PowerPAK® ChipFET™ Dual	20 V	PowerPAK® ChipFet Dual	N and P-Channel	6 A	Logic Level Gate	8.3 W	MOSFET (Metal Oxide)	Surface Mount	-55 °C	150 °C	1 V
Vishay General Semiconductor - Diodes Division SI5517DU-T1-E3	39 mOhm	16 nC	PowerPAK® ChipFET™ Dual	20 V	PowerPAK® ChipFet Dual	N and P-Channel	6 A	Logic Level Gate	8.3 W	MOSFET (Metal Oxide)	Surface Mount	-55 °C	150 °C	1 V

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General part information

Mosfet Array 20V 6A 8.3W Surface Mount PowerPAK® ChipFet Dual

Technical documentation and resources