SI5517 Series

Catalog

MOSFET N/P-CH 20V 6A CHIPFET

Part	Rds On (Max) @ Id, Vgs [Max]	Gate Charge (Qg) (Max) @ Vgs [Max]	Package / Case	Drain to Source Voltage (Vdss)	Supplier Device Package	Configuration	Current - Continuous Drain (Id) @ 25°C	FET Feature	Power - Max [Max]	Technology	Mounting Type	Operating Temperature [Min]	Operating Temperature [Max]	Vgs(th) (Max) @ Id
Vishay General Semiconductor - Diodes Division SI5517DU-T1-GE3	39 mOhm	16 nC	PowerPAK® ChipFET™ Dual	20 V	PowerPAK® ChipFet Dual	N and P-Channel	6 A	Logic Level Gate	8.3 W	MOSFET (Metal Oxide)	Surface Mount	-55 °C	150 °C	1 V
Vishay General Semiconductor - Diodes Division SI5517DU-T1-E3	39 mOhm	16 nC	PowerPAK® ChipFET™ Dual	20 V	PowerPAK® ChipFet Dual	N and P-Channel	6 A	Logic Level Gate	8.3 W	MOSFET (Metal Oxide)	Surface Mount	-55 °C	150 °C	1 V