Discrete Semiconductor Products

IRFD113

Obsolete

MOSFET N-CH 60V 800MA 4DIP

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Discrete Semiconductor Products

Obsolete

MOSFET N-CH 60V 800MA 4DIP

Technical Specifications

Parameters and characteristics for this part

Specification	IRFD113

Current - Continuous Drain (Id) @ 25°C	800 mA
Drain to Source Voltage (Vdss)	60 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	7 nC
Input Capacitance (Ciss) (Max) @ Vds	200 pF
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	4-DIP (0.300", 7.62mm)
Power Dissipation (Max)	1 W
Rds On (Max) @ Id, Vgs [Max]	800 mOhm
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	4 V

Part	Input Capacitance (Ciss) (Max) @ Vds	Rds On (Max) @ Id, Vgs [Max]	Technology	Package / Case	Power Dissipation (Max)	Mounting Type	Current - Continuous Drain (Id) @ 25°C	Gate Charge (Qg) (Max) @ Vgs	Operating Temperature [Min]	Operating Temperature [Max]	Drain to Source Voltage (Vdss)	Vgs (Max)	FET Type	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id
Vishay General Semiconductor - Diodes Division IRFD113	200 pF	800 mOhm	MOSFET (Metal Oxide)	4-DIP (0.300" 7.62mm)	1 W	Through Hole	800 mA	7 nC	-55 °C	150 °C	60 V	20 V	N-Channel	10 V	4 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

N-Channel 60 V 800mA (Tc) 1W (Tc) Through Hole 4-HVMDIP

Technical documentation and resources