IRFD113 Series
Manufacturer: Vishay General Semiconductor - Diodes Division
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MOSFET N-CH 60V 800MA 4DIP
| Part | Input Capacitance (Ciss) (Max) @ Vds | Rds On (Max) @ Id, Vgs [Max] | Technology | Package / Case | Power Dissipation (Max) | Mounting Type | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | Operating Temperature [Min] | Operating Temperature [Max] | Drain to Source Voltage (Vdss) | Vgs (Max) | FET Type | Drive Voltage (Max Rds On, Min Rds On) | Vgs(th) (Max) @ Id |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 Vishay General Semiconductor - Diodes Division | 200 pF | 800 mOhm | MOSFET (Metal Oxide) | 4-DIP (0.300" 7.62mm) | 1 W | Through Hole | 800 mA | 7 nC | -55 °C | 150 °C | 60 V | 20 V | N-Channel | 10 V | 4 V |