Discrete Semiconductor Products

NTMTSC002N10MCTXG

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MOSFET, N-CH, 100V, 236A, 175DEG C, 255W ROHS COMPLIANT: YES

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Discrete Semiconductor Products

Active

MOSFET, N-CH, 100V, 236A, 175DEG C, 255W ROHS COMPLIANT: YES

Technical Specifications

Parameters and characteristics for this part

Specification	NTMTSC002N10MCTXG

Current - Continuous Drain (Id) @ 25°C	45 A, 236 A
Drain to Source Voltage (Vdss)	100 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	89 nC
Input Capacitance (Ciss) (Max) @ Vds	6305 pF
Mounting Type	Wettable Flank, Surface Mount
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	8-PowerTDFN
Power Dissipation (Max)	9 W, 255 W
Rds On (Max) @ Id, Vgs	2 mOhm
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V

Part	Vgs (Max)	Mounting Type	Rds On (Max) @ Id, Vgs	Current - Continuous Drain (Id) @ 25°C	Power Dissipation (Max)	Gate Charge (Qg) (Max) @ Vgs [Max]	FET Type	Drain to Source Voltage (Vdss)	Package / Case	Operating Temperature [Min]	Operating Temperature [Max]	Input Capacitance (Ciss) (Max) @ Vds	Technology
ON Semiconductor NTMTSC002N10MCTXG	20 V	Surface Mount Wettable Flank	2 mOhm	45 A 236 A	9 W 255 W	89 nC	N-Channel	100 V	8-PowerTDFN	-55 °C	175 ░C	6305 pF	MOSFET (Metal Oxide)

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General part information

N-Channel 100 V 45A (Ta), 236A (Tc) 9W (Ta), 255W (Tc) Surface Mount, Wettable Flank 8-TDFNW (8.3x8.4)

Technical documentation and resources