Zenode.ai Logo
Beta
SOT669
Discrete Semiconductor Products

PHPT60603PYX

Active
Nexperia USA Inc.

60 V, 3 A PNP HIGH POWER BIPOLAR TRANSISTOR

Deep-Dive with AI

Search across all available documentation for this part.

SOT669
Discrete Semiconductor Products

PHPT60603PYX

Active
Nexperia USA Inc.

60 V, 3 A PNP HIGH POWER BIPOLAR TRANSISTOR

Technical Specifications

Parameters and characteristics for this part

SpecificationPHPT60603PYX
Current - Collector (Ic) (Max) [Max]3 A
Current - Collector Cutoff (Max) [Max]100 nA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]150
Frequency - Transition110 MHz
GradeAutomotive
Mounting TypeSurface Mount
Operating Temperature175 °C
Package / CaseSC-100, SOT-669
Power - Max [Max]1.25 W
QualificationAEC-Q100
Supplier Device PackagePower-SO8, LFPAK56
Transistor TypePNP
Vce Saturation (Max) @ Ib, Ic225 mV
Voltage - Collector Emitter Breakdown (Max) [Max]60 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyN/A 199056$ 1.00

Description

General part information

PHPT60603PY Series

PNP high power bipolar transistor in a SOT669 (LFPAK56) Surface-Mounted Device (SMD) power plastic package.