Catalog
60 V, 3 A PNP high power bipolar transistor
Description
AI
PNP high power bipolar transistor in a SOT669 (LFPAK56) Surface-Mounted Device (SMD) power plastic package.
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60 V, 3 A PNP high power bipolar transistor
60 V, 3 A PNP high power bipolar transistor
| Part | Package / Case | Qualification | Vce Saturation (Max) @ Ib, Ic | Current - Collector Cutoff (Max) [Max] | Frequency - Transition | Grade | Supplier Device Package | Power - Max [Max] | Voltage - Collector Emitter Breakdown (Max) [Max] | DC Current Gain (hFE) (Min) @ Ic, Vce [Min] | Current - Collector (Ic) (Max) [Max] | Mounting Type | Operating Temperature | Transistor Type |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Nexperia USA Inc. | SC-100 SOT-669 | AEC-Q100 | 225 mV | 100 nA | 110 MHz | Automotive | LFPAK56 Power-SO8 | 1.25 W | 60 V | 150 | 3 A | Surface Mount | 175 °C | PNP |