STD25NF20
ActiveAUTOMOTIVE-GRADE N-CHANNEL 200 V, 0.10 OHM TYP., 18 A STRIPFET POWER MOSFET IN DPAK PACKAGE
STD25NF20
ActiveAUTOMOTIVE-GRADE N-CHANNEL 200 V, 0.10 OHM TYP., 18 A STRIPFET POWER MOSFET IN DPAK PACKAGE
Technical Specifications
Parameters and characteristics for this part
| Specification | STD25NF20 |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 18 A |
| Drain to Source Voltage (Vdss) | 200 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10 V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 39 nC |
| Grade | Automotive |
| Input Capacitance (Ciss) (Max) @ Vds | 940 pF |
| Mounting Type | Surface Mount |
| Operating Temperature [Max] | 175 °C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | TO-252-3, SC-63, DPAK (2 Leads + Tab) |
| Power Dissipation (Max) | 110 W |
| Qualification | AEC-Q101 |
| Rds On (Max) @ Id, Vgs | 125 mOhm |
| Supplier Device Package | DPAK |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 20 V |
| Vgs(th) (Max) @ Id | 4 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
Description
General part information
STD25NF20 Series
This N-channel enhancement mode Power MOSFET benefits from the latest refinement of STMicroelectronics' unique "single feature size" strip-based process, which decreases the critical alignment steps to offer exceptional manufacturing reproducibility. The result is a transistor with extremely high packing density for low on-resistance, rugged avalanche characteristics and low gate charge.
Documents
Technical documentation and resources