Specification	PXN014-100QEJ

Current - Continuous Drain (Id) @ 25°C	8.2 A
Drain to Source Voltage (Vdss)	100 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	46 nC
Input Capacitance (Ciss) (Max) @ Vds	2154 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	8-PowerVDFN
Power Dissipation (Max)	1.8 W
Rds On (Max) @ Id, Vgs	14.4 mOhm
Supplier Device Package	MLPAK33
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	2.5 V

PXN014-100QE Series

100 V, N-channel Trench MOSFET

Part	Technology	Rds On (Max) @ Id, Vgs	Vgs (Max)	Power Dissipation (Max)	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs [Max]	Current - Continuous Drain (Id) @ 25°C	FET Type	Drive Voltage (Max Rds On, Min Rds On)	Package / Case	Mounting Type	Input Capacitance (Ciss) (Max) @ Vds	Supplier Device Package	Operating Temperature [Max]	Operating Temperature [Min]	Drain to Source Voltage (Vdss)
Nexperia USA Inc. PXN014-100QEJ	MOSFET (Metal Oxide)	14.4 mOhm	20 V	1.8 W	2.5 V	46 nC	8.2 A	N-Channel	4.5 V 10 V	8-PowerVDFN	Surface Mount	2154 pF	MLPAK33	150 °C	-55 °C	100 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	N/A	0	$ 0.59

General part information

NextPower 100 V, enhanced logic level gate drive MOSFET in an MLPAK33 (SOT8002) Surface-Mounted Device (SMD) plastic package.

Technical documentation and resources