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100 V, N-channel Trench MOSFET
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NextPower 100 V, enhanced logic level gate drive MOSFET in an MLPAK33 (SOT8002) Surface-Mounted Device (SMD) plastic package.
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100 V, N-channel Trench MOSFET
100 V, N-channel Trench MOSFET
| Part | Technology | Rds On (Max) @ Id, Vgs | Vgs (Max) | Power Dissipation (Max) | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs [Max] | Current - Continuous Drain (Id) @ 25°C | FET Type | Drive Voltage (Max Rds On, Min Rds On) | Package / Case | Mounting Type | Input Capacitance (Ciss) (Max) @ Vds | Supplier Device Package | Operating Temperature [Max] | Operating Temperature [Min] | Drain to Source Voltage (Vdss) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Nexperia USA Inc. | MOSFET (Metal Oxide) | 14.4 mOhm | 20 V | 1.8 W | 2.5 V | 46 nC | 8.2 A | N-Channel | 4.5 V 10 V | 8-PowerVDFN | Surface Mount | 2154 pF | MLPAK33 | 150 °C | -55 °C | 100 V |