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LTC7893AUFDM#PBF
Integrated Circuits (ICs)

LTC7893AUFDM#PBF

Active
Analog Devices Inc./Maxim Integrated

DC/DC CTRL, SYNC BOOST, 3MHZ, WFQFN-28 ROHS COMPLIANT: YES

LTC7893AUFDM#PBF
Integrated Circuits (ICs)

LTC7893AUFDM#PBF

Active
Analog Devices Inc./Maxim Integrated

DC/DC CTRL, SYNC BOOST, 3MHZ, WFQFN-28 ROHS COMPLIANT: YES

Technical Specifications

Parameters and characteristics for this part

SpecificationLTC7893AUFDM#PBF
Clock SyncFalse
Control FeaturesPower Good, Dead Time Control, Current Limit, Phase Control, Frequency Control, Soft Start
Duty Cycle (Max) [Max]93 %
Frequency - Switching [Max]3 MHz
Frequency - Switching [Min]100 kHz
FunctionStep-Up
Mounting TypeWettable Flank, Surface Mount
Number of Outputs1
Operating Temperature [Max]125 °C
Operating Temperature [Min]-40 C
Output ConfigurationPositive
Output Phases1
Output TypeTransistor Driver
Package / Case28-WFQFN Exposed Pad
Supplier Device Package28-QFN (4x5)
Synchronous RectifierTrue
TopologyBoost
Voltage - Supply (Vcc/Vdd) [Max]60 V
Voltage - Supply (Vcc/Vdd) [Min]4 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$Updated
DigikeyN/A 199$ 6.611m+
NewarkEach 1$ 6.611m+
10$ 4.38
25$ 4.01
50$ 3.64
146$ 3.27
292$ 2.99
511$ 2.76

Description

General part information

LTC7893 Series

The LTC®7893 is a high performance, step-up, dc-to-dc switching regulator controller that drives all N-channel synchronous gallium nitride (GaN) field effect transistor (FET) power stages from output voltages up to 100V. The LTC7893 solves many of the challenges traditionally faced when using GaN FETs. The LTC7893 simplifies the application design while requiring no protection diodes and no other additional external components compared to a silicon metal-oxide semiconductor field effect transistor (MOSFET) solution.The internal smart bootstrap switches prevent overcharging of the BOOST pin to the SW pin high-side driver supply during dead times, protecting the gate of the top GaN FET. The dead times of the LTC7893 can optionally be optimized with external resistors for margin or to tailor the application for higher efficiency and allowing for high frequency operation.The gate drive voltage of the LTC7893 can be precisely adjusted from 4V to 5.5V to optimize performance, and to allow the use of different GaN FETs, or even logic level MOSFETs. When biased from the boost converter regulator output, the LTC7893 can operate from an input supply as low as 1V after start-up.Automotive and Industrial Power Systems Military Avionics and Medical Systems Telecommunications Power Systems