
LTC7893AUFDM#TRPBF
Active100V LOW IQ, SYNCHRONOUS BOOST CONTROLLER FOR GAN FETS
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LTC7893AUFDM#TRPBF
Active100V LOW IQ, SYNCHRONOUS BOOST CONTROLLER FOR GAN FETS
Technical Specifications
Parameters and characteristics for this part
| Specification | LTC7893AUFDM#TRPBF |
|---|---|
| Clock Sync | False |
| Control Features | Power Good, Dead Time Control, Current Limit, Phase Control, Frequency Control, Soft Start |
| Duty Cycle (Max) [Max] | 93 % |
| Frequency - Switching [Max] | 3 MHz |
| Frequency - Switching [Min] | 100 kHz |
| Function | Step-Up |
| Mounting Type | Wettable Flank, Surface Mount |
| Number of Outputs | 1 |
| Operating Temperature [Max] | 125 °C |
| Operating Temperature [Min] | -40 C |
| Output Configuration | Positive |
| Output Phases | 1 |
| Output Type | Transistor Driver |
| Package / Case | 28-WFQFN Exposed Pad |
| Supplier Device Package | 28-QFN (4x5) |
| Synchronous Rectifier | True |
| Topology | Boost |
| Voltage - Supply (Vcc/Vdd) [Max] | 60 V |
| Voltage - Supply (Vcc/Vdd) [Min] | 4 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | Updated |
|---|---|---|---|---|
| Digikey | N/A | 0 | $ 2.61 | 1m+ |
Description
General part information
LTC7893 Series
The LTC®7893 is a high performance, step-up, dc-to-dc switching regulator controller that drives all N-channel synchronous gallium nitride (GaN) field effect transistor (FET) power stages from output voltages up to 100V. The LTC7893 solves many of the challenges traditionally faced when using GaN FETs. The LTC7893 simplifies the application design while requiring no protection diodes and no other additional external components compared to a silicon metal-oxide semiconductor field effect transistor (MOSFET) solution.The internal smart bootstrap switches prevent overcharging of the BOOST pin to the SW pin high-side driver supply during dead times, protecting the gate of the top GaN FET. The dead times of the LTC7893 can optionally be optimized with external resistors for margin or to tailor the application for higher efficiency and allowing for high frequency operation.The gate drive voltage of the LTC7893 can be precisely adjusted from 4V to 5.5V to optimize performance, and to allow the use of different GaN FETs, or even logic level MOSFETs. When biased from the boost converter regulator output, the LTC7893 can operate from an input supply as low as 1V after start-up.Automotive and Industrial Power Systems Military Avionics and Medical Systems Telecommunications Power Systems
Documents
Technical documentation and resources