Discrete Semiconductor Products
PSMN1R9-80SSEJ
ActiveNexperia USA Inc.
MOSFETS NEXTPOWER 100 V, 2.07 MOHM, 267 AMP, N-CHANNEL MOSFET IN LFPAK88 PACKAGE
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Discrete Semiconductor Products
PSMN1R9-80SSEJ
ActiveNexperia USA Inc.
MOSFETS NEXTPOWER 100 V, 2.07 MOHM, 267 AMP, N-CHANNEL MOSFET IN LFPAK88 PACKAGE
Deep-Dive with AI
Technical Specifications
Parameters and characteristics for this part
| Specification | PSMN1R9-80SSEJ |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 286 A |
| Drain to Source Voltage (Vdss) | 80 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10 V |
| FET Type | N-Channel |
| Input Capacitance (Ciss) (Max) @ Vds [Max] | 17140 pF |
| Mounting Type | Surface Mount |
| Operating Temperature [Max] | 175 °C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | SOT-1235 |
| Power Dissipation (Max) | 340 W |
| Rds On (Max) @ Id, Vgs | 1.9 mOhm |
| Supplier Device Package | LFPAK88 (SOT1235) |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 20 V |
| Vgs(th) (Max) @ Id | 3.6 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
Description
General part information
PSMN1R9-80SSE Series
N-channel enhancement mode MOSFET in a LFPAK88 package qualified to 175 °C. Part of Nexperia's Application Specific MOSFETs (ASFETs) for Hotswap and Soft Start. The PSMN1R9-80SSE delivers very low RDSonand enhanced safe operating area performance in a high-reliability copper-clip LFPAK88 package.
Documents
Technical documentation and resources