PSMN1R9-80SSE Series

N-channel 80 V, 1.9 mOhm MOSFET with enhanced SOA in LFPAK88

Catalog

N-channel 80 V, 1.9 mOhm MOSFET with enhanced SOA in LFPAK88

Part	Vgs(th) (Max) @ Id	Vgs (Max)	Package / Case	Drive Voltage (Max Rds On, Min Rds On)	Current - Continuous Drain (Id) @ 25°C	Input Capacitance (Ciss) (Max) @ Vds [Max]	Power Dissipation (Max)	Rds On (Max) @ Id, Vgs	Mounting Type	Technology	Operating Temperature [Max]	Operating Temperature [Min]	Drain to Source Voltage (Vdss)	FET Type	Supplier Device Package
Nexperia USA Inc. PSMN1R9-80SSEJ	3.6 V	20 V	SOT-1235	10 V	286 A	17140 pF	340 W	1.9 mOhm	Surface Mount	MOSFET (Metal Oxide)	175 °C	-55 °C	80 V	N-Channel	LFPAK88 (SOT1235)

Catalog

N-channel 80 V, 1.9 mOhm MOSFET with enhanced SOA in LFPAK88

Description

N-channel enhancement mode MOSFET in a LFPAK88 package qualified to 175 °C. Part of Nexperia's Application Specific MOSFETs (ASFETs) for Hotswap and Soft Start. The PSMN1R9-80SSE delivers very low RDSonand enhanced safe operating area performance in a high-reliability copper-clip LFPAK88 package.