Specification	HMC-ALH102

Current - Supply	55 mA
Frequency [Max]	20 GHz
Frequency [Min]	2 GHz
Gain	10 dBi
Mounting Type	Surface Mount
Noise Figure	2.5 dB
P1dB	10 dBm
Package / Case	Die
RF Type	General Purpose
Supplier Device Package	Die
Test Frequency [Max]	20 GHz
Test Frequency [Min]	2 GHz
Voltage - Supply	2 V

HMC-ALH102-DIE Series

Wideband Low Noise Amplifier Chip, 2 - 20 GHz

Part	Test Frequency [Min]	Test Frequency [Max]	Mounting Type	Noise Figure	Frequency [Max]	Frequency [Min]	Supplier Device Package	Gain	Voltage - Supply	RF Type	Current - Supply	P1dB	Package / Case	Test Frequency
Analog Devices Inc./Maxim Integrated HMC-ALH102	2 GHz	20 GHz	Surface Mount	2.5 dB	20 GHz	2 GHz	Die	10 dBi	2 V	General Purpose	55 mA	10 dBm	Die
Analog Devices Inc./Maxim Integrated HMC-ALH102-SX			Surface Mount	2.5 dB	20 GHz	2 GHz	Die	10 dBi	2 V	General Purpose	55 mA	10 dBm	Die	10 GHz

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$	Updated

Description

General part information

HMC-ALH102-DIE Series

The HMC-ALH102 is a GaAs MMIC HEMT Low Noise Distributed Amplifier die which operates between 2 and 20 GHz. The amplifier provides 11.6 dB of gain at 10 GHz, <3.5 dB noise figure and +10 dBm of output power at 1 dB gain compression while requiring only 55 mA from a +2V supply voltage. The HMC-ALH102 amplifier is ideal for integration into Multi-Chip-Modules (MCMs) due to its small size.ApplicationsWideband Communications ReceiversSurveillance SystemsPoint-to-Point RadiosPoint-to-Multi-Point RadiosMilitary & SpaceTest Instrumentation

Documents

Technical documentation and resources

HMC-ALH102 GaAs HEMT MMIC Wideband Low Noise Amplifier, 2 - 20 GHz Data Sheet

Data Sheet