HMC-ALH102-DIE Series

Wideband Low Noise Amplifier Chip, 2 - 20 GHz

Manufacturer: Analog Devices Inc./Maxim Integrated

Catalog

Wideband Low Noise Amplifier Chip, 2 - 20 GHz

Part	Test Frequency [Min]	Test Frequency [Max]	Mounting Type	Noise Figure	Frequency [Max]	Frequency [Min]	Supplier Device Package	Gain	Voltage - Supply	RF Type	Current - Supply	P1dB	Package / Case	Test Frequency
Analog Devices Inc./Maxim Integrated HMC-ALH102	2 GHz	20 GHz	Surface Mount	2.5 dB	20 GHz	2 GHz	Die	10 dBi	2 V	General Purpose	55 mA	10 dBm	Die
Analog Devices Inc./Maxim Integrated HMC-ALH102-SX			Surface Mount	2.5 dB	20 GHz	2 GHz	Die	10 dBi	2 V	General Purpose	55 mA	10 dBm	Die	10 GHz

Catalog

Wideband Low Noise Amplifier Chip, 2 - 20 GHz

Description

The HMC-ALH102 is a GaAs MMIC HEMT Low Noise Distributed Amplifier die which operates between 2 and 20 GHz. The amplifier provides 11.6 dB of gain at 10 GHz, <3.5 dB noise figure and +10 dBm of output power at 1 dB gain compression while requiring only 55 mA from a +2V supply voltage. The HMC-ALH102 amplifier is ideal for integration into Multi-Chip-Modules (MCMs) due to its small size.ApplicationsWideband Communications ReceiversSurveillance SystemsPoint-to-Point RadiosPoint-to-Multi-Point RadiosMilitary & SpaceTest Instrumentation