Specification	IKW50N65RH5XKSA1

Current - Collector (Ic) (Max) [Max]	80 A
Current - Collector Pulsed (Icm)	200 A
Gate Charge	120 nC
IGBT Type	Trench Field Stop
Mounting Type	Through Hole
Operating Temperature [Max]	175 °C
Operating Temperature [Min]	-40 °C
Package / Case	TO-247-3
Power - Max [Max]	305 W
Supplier Device Package	PG-TO247-3
Switching Energy	230 µJ, 180 µJ
Td (on/off) @ 25°C	22 ns, 180 ns
Test Condition	12 Ohm, 400 V, 25 A, 15 V
Vce(on) (Max) @ Vge, Ic	2.1 V
Voltage - Collector Emitter Breakdown (Max) [Max]	650 V

IKW50N65 Series

Part	IGBT Type	Grade	Power - Max [Max]	Supplier Device Package	Current - Collector (Ic) (Max) [Max]	Switching Energy	Operating Temperature [Max]	Operating Temperature [Min]	Current - Collector Pulsed (Icm)	Mounting Type	Voltage - Collector Emitter Breakdown (Max) [Max]	Test Condition	Package / Case	Qualification	Td (on/off) @ 25°C	Reverse Recovery Time (trr)	Vce(on) (Max) @ Vge, Ic	Gate Charge	Vce(on) (Max) @ Vge, Ic [Max]	Td (on/off) @ 25°C [custom]	Td (on/off) @ 25°C [custom]	Td (on/off) @ 25°C
INFINEON IKW50N65ET7XKSA1	Trench Field Stop	Automotive	273 W	PG-TO247-3	50 A	1.2 mJ 850 µJ	175 °C	-40 °C	150 A	Through Hole	650 V	9 Ohm 15 V 50 A 400 V	TO-247-3	AEC-Q101	26 ns 350 ns	93 ns
INFINEON IKW50N65H5FKSA1			305 W	PG-TO247-3	80 A	180 µJ 520 µJ	175 °C	-40 °C	150 A	Through Hole	650 V	12 Ohm 15 V 25 A 400 V	TO-247-3		21 ns 180 ns	57 ns	2.1 V	120 nC
INFINEON IKW50N65ES5XKSA1	Trench		274 W	PG-TO247-3	80 A	1.23 mJ 550 µJ	175 °C	-40 °C	200 A	Through Hole	650 V	8.2 Ohm 15 V 50 A 400 V	TO-247-3			70 ns		120 nC	1.7 V	20 ns	127 ns
INFINEON IKW50N65F5FKSA1			305 W	PG-TO247-3	80 A	160 µJ 490 µJ	175 °C	-40 °C	150 A	Through Hole	650 V	12 Ohm 15 V 25 A 400 V	TO-247-3			52 ns	2.1 V	120 nC
INFINEON IKW50N65SS5XKSA1	Trench Field Stop		274 W	PG-TO247-3	80 A	320 µJ 550 µJ	175 °C	-40 °C	200 A	Through Hole	650 V	9 Ohm 15 V 50 A 400 V	TO-247-3					110 nC	1.7 V			20 ns 140 ns
INFINEON IKW50N65RH5XKSA1	Trench Field Stop		305 W	PG-TO247-3	80 A	180 µJ 230 µJ	175 °C	-40 °C	200 A	Through Hole	650 V	12 Ohm 15 V 25 A 400 V	TO-247-3				2.1 V	120 nC				22 ns 180 ns

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	N/A	280	$ 7.28
	Tube	1	$ 7.92
		30	$ 4.59
		120	$ 3.86
		510	$ 3.35

Description

General part information

IKW50N65 Series

650 V, 50 A TRENCHSTOP™ 5 H5 IGBT co-packed with half-rated 6th generation Silicon Carbide CoolSiC™ Schottky barrier diode in TO-247-3 package. The ultra-fast 650 V hard-switchingTRENCHSTOP™ 5 H5IGBT benefits very low switching losses at switching speed above 30 kHz. Combination of ultra-fastTRENCHSTOP™ 5 H5IGBT with half-ratedfreewheeling SiC Schottky barrier diodesinCoolSiC™ Hybrid discreteenables unprecedented reduction of total switching losses and allows to increase significantly switching frequency.

Documents

Technical documentation and resources

Datasheet

Optimizing layout for paralleling power discrete semiconductor devices

Application Notes

IKW50N65RH5

Data Sheets